US 11,791,273 B2
Microelectronic devices including contact structures, and related memory devices, electronic systems, and methods
Fatma Arzum Simsek-Ege, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 13, 2021, as Appl. No. 17/500,599.
Prior Publication US 2023/0110706 A1, Apr. 13, 2023
Int. Cl. H01L 23/538 (2006.01); G11C 5/06 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/5386 (2013.01) [G11C 5/06 (2013.01); H10B 12/30 (2023.02)] 36 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a first microelectronic device structure, comprising:
memory arrays comprising memory cells comprising access devices and storage node devices;
digit lines coupled to the access devices and extending in a first direction to a digit line exit region; and
word lines coupled to the access devices and extending in a second direction to a word line exit region;
a second microelectronic device structure attached to the first microelectronic device structure, the second microelectronic device structure comprising control logic devices over and in electrical communication with the memory cells; and
contact structures individually in contact with the digit lines in the digit line exit region and in electrical communication with at least some of the control logic devices, at least one of the contact structures comprising:
a first cross-sectional area at an interface of the first microelectronic device structure and the second microelectronic device structure; and
a second cross-sectional area at an interface of one of the digit lines, the second cross-sectional area smaller than the first cross-sectional area.