CPC H01L 23/5226 (2013.01) [H01L 21/76819 (2013.01); H01L 21/76837 (2013.01); H01L 21/76885 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01)] | 20 Claims |
1. An integrated circuit (IC) structure, comprising:
a transistor structure;
a first interconnect feature electrically coupled to the transistor structure, wherein:
the first interconnect feature is over the transistor structure;
a first portion of the first interconnect feature has a first thickness; and
a second portion of the first interconnect feature has a second thickness, less than the first thickness;
a dielectric material adjacent to a sidewall of the first portion of the first interconnect feature, and over the second portion of the first interconnect feature; and
a second interconnect feature in contact with the first portion of the first interconnect feature.
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