US 11,791,210 B2
Semiconductor device and manufacturing method of semiconductor device including a through electrode for connection of wirings
Takushi Shigetoshi, Nagasaki (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Mar. 16, 2022, as Appl. No. 17/655,075.
Application 17/655,075 is a continuation of application No. 16/969,665, granted, now 11,380,584, previously published as PCT/JP2018/048399, filed on Dec. 28, 2018.
Claims priority of application No. 2018-030632 (JP), filed on Feb. 23, 2018.
Prior Publication US 2022/0208608 A1, Jun. 30, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/762 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 27/146 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76232 (2013.01); H01L 23/481 (2013.01); H01L 24/05 (2013.01); H01L 27/14636 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 2224/0557 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate that includes a front surface and a back surface;
a cylindrical insulating film that penetrates the semiconductor substrate;
a wiring layer;
a front surface side pad adjacent to the front surface of the semiconductor substrate;
a conductor layer adjacent to the front surface side pad, wherein
the front surface side pad has a first surface and a second surface,
the first surface is in contact with the conductor layer,
the second surface is in contact with the wiring layer, and
the conductor layer is on an inner side of the cylindrical insulating film; and
a back surface side pad on the back surface of the semiconductor substrate, wherein
the back surface side pad is connected to the front surface side pad via the conductor layer, and
the conductor layer comprises a film that has a same thickness as the back surface side pad.