US 11,791,209 B2
Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device
Seung-Heon Lee, Seoul (KR); Munjun Kim, Suwon-si (KR); Jaekang Koh, Seongnam-si (KR); and Tae-Jong Han, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Oct. 24, 2022, as Appl. No. 17/971,807.
Application 17/971,807 is a continuation of application No. 16/784,830, filed on Feb. 7, 2020, granted, now 11,482,453, issued on Oct. 25, 2022.
Claims priority of application No. 10-2019-0070864 (KR), filed on Jun. 14, 2019.
Prior Publication US 2023/0043714 A1, Feb. 9, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/76895 (2013.01) [H01L 21/0337 (2013.01); H01L 21/32139 (2013.01); H01L 21/7685 (2013.01); H01L 21/76865 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor manufacturing apparatus comprising:
a transfer chamber;
at least one thermally decomposable layer deposition chamber connected to the transfer chamber and configured to deposit a thermally decomposable layer formed of a polymer by supplying a first monomer and a second monomer;
at least one annealing chamber connected to the transfer chamber and configured to decompose the thermally decomposable layer; and
at least one capping layer deposition chamber connected to the transfer chamber and configured to deposit a capping layer,
wherein the thermally decomposable layer is thermally decomposed at a first temperature, the at least one annealing chamber is configured to maintain a third temperature, and the third temperature is higher than the first temperature.