CPC H01L 21/67069 (2013.01) [H01L 21/31116 (2013.01)] | 13 Claims |
1. An etching method for selectively etching a material containing Si and O, comprising:
providing a substrate containing the material containing Si and O in a chamber;
repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas subsequent to the first period with at least a part of the second period not overlapping with the first period; and
heating and removing a reaction product generated by supplying of the basic gas and supplying of the fluorine-containing gas.
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