US 11,791,175 B2
Etching method and etching apparatus
Yoshiki Igarashi, Nirasaki (JP); Satoru Kikushima, Hsin-chu (TW); Takayuki Suga, Nirasaki (JP); Jun Lin, Nirasaki (JP); and Chengya Chu, Hsin-chu (TW)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on May 13, 2021, as Appl. No. 17/319,514.
Claims priority of application No. 2020-085747 (JP), filed on May 15, 2020.
Prior Publication US 2021/0358772 A1, Nov. 18, 2021
Int. Cl. H01L 21/67 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/67069 (2013.01) [H01L 21/31116 (2013.01)] 13 Claims
OG exemplary drawing
 
1. An etching method for selectively etching a material containing Si and O, comprising:
providing a substrate containing the material containing Si and O in a chamber;
repeating a first period for supplying a basic gas, which is started first, and a second period for supplying a fluorine-containing gas subsequent to the first period with at least a part of the second period not overlapping with the first period; and
heating and removing a reaction product generated by supplying of the basic gas and supplying of the fluorine-containing gas.