US 11,791,165 B2
Method of dry etching copper thin film and semiconductor device
Cheewon Chung, Seoul (KR); and Jaesang Choi, Incheon (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 30, 2021, as Appl. No. 17/460,700.
Application 17/460,700 is a continuation of application No. 16/728,342, filed on Dec. 27, 2019, granted, now 11,257,684.
Claims priority of application No. 10-2018-0172134 (KR), filed on Dec. 28, 2018.
Prior Publication US 2021/0391187 A1, Dec. 16, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); C23F 4/00 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/32136 (2013.01) [C23F 4/00 (2013.01); H01L 21/3065 (2013.01); H01L 21/32139 (2013.01); H01L 23/53228 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of etching a copper (Cu) thin film, the method comprising:
patterning a hard mask layer on the Cu thin film to form a hard mask on the Cu thin film; and
etching the Cu thin film through the hard mask using a plasma of a mixed gas;
wherein the Cu thin film has a sidewall slope of 70° or greater after the etching, and
wherein the mixed gas includes an inert gas and an organic chelator material including an amine group, the mixed gas not including a halogen gas or a halide gas.
 
9. A method of etching a copper (Cu) thin film, the method comprising:
providing the Cu thin film on a substrate;
forming a hard mask layer on the Cu thin film;
etching the hard mask layer to form a hard mask on the Cu thin film; and
plasma etching the Cu thin film through the hard mask using plasma generated from a mixed gas including an inert gas and an organic chelator material including an amine group,
wherein the Cu thin film has a sidewall slope of 70° or greater after the plasma etching.