US 11,791,160 B2
Polycrystalline film, method for forming polycrystalline film, laser crystallization device and semiconductor device
Jun Gotoh, Yokohama (JP); Kaori Saito, Yokohama (JP); and Hiroshi Ikenoue, Fukuoka (JP)
Assigned to KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, Fukuoka (JP); and V TECHNOLOGY CO., LTD., Yokohama (JP)
Appl. No. 17/791,047
Filed by V TECHNOLOGY CO., LTD., Yokohama (JP); and KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION, Fukuoka (JP)
PCT Filed Dec. 15, 2020, PCT No. PCT/JP2020/046746
§ 371(c)(1), (2) Date Jul. 6, 2022,
PCT Pub. No. WO2021/140849, PCT Pub. Date Jul. 15, 2021.
Claims priority of application No. 2020-002754 (JP), filed on Jan. 10, 2020.
Prior Publication US 2023/0027404 A1, Jan. 26, 2023
Int. Cl. H01L 21/02 (2006.01); C22F 3/02 (2006.01); H01L 21/67 (2006.01); H01L 23/532 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/0268 (2013.01) [C22F 3/02 (2013.01); H01L 21/67115 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 29/04 (2013.01); H01L 29/78675 (2013.01); H01L 29/78678 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A polycrystalline film, comprising:
evenly distributed crystal grains lining up in parallel lines extending along the surface of the film, and
a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains, in a pattern that exposes the laterally crystallized film after lateral crystal growth, where: one of the both ends of the grain interface is separated from the other in a direction along the surface of the film,
wherein each of the crystal grains is in the shape of a column having a height from the lower surface to the upper surface of the film, and
the crystal grain includes a crystal core in the middle inside its limits within the surface of the film, the crystal core being in the shape of a column having a height from the lower surface to the upper surface of the film.