US 11,791,155 B2
Diffusion barriers for germanium
Huiyuan Wang, Santa Clara, CA (US); Susmit Singha Roy, Sunnyvale, CA (US); Takehito Koshizawa, San Jose, CA (US); Bo Qi, San Jose, CA (US); Abhijit Basu Mallick, Fremont, CA (US); and Nitin K. Ingle, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 27, 2020, as Appl. No. 17/4,262.
Prior Publication US 2022/0068640 A1, Mar. 3, 2022
Int. Cl. H01L 21/02 (2006.01); H01L 29/16 (2006.01)
CPC H01L 21/02304 (2013.01) [H01L 21/02236 (2013.01); H01L 21/02362 (2013.01); H01L 21/02532 (2013.01); H01L 29/16 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor processing method comprising:
forming a semiconductor layer stack from pairs of Si-and-SiGe layers, wherein the pairs of Si-and-SiGe layers are formed by:
forming a silicon layer;
forming a germanium barrier layer on the silicon layer, wherein the germanium barrier layer is less than or about 20 Å, and wherein the germanium barrier layer comprises a silicon oxide layer that is formed by exposing the silicon layer to an oxidation plasma generated from an oxidation precursor comprising O2; and
forming a silicon-germanium layer on the germanium barrier layer, wherein the silicon-germanium layer comprises greater than or about 30 at. % germanium.