US 11,791,153 B2
Deposition of hafnium oxide within a high aspect ratio hole
Jiyeon Kim, Tempe, AZ (US); Petri Raisanen, Gilbert, AZ (US); Sol Kim, Phoenix, AZ (US); Ying-Shen Kuo, Chandler, AZ (US); Michael Schmotzer, Chandler, AZ (US); Eric James Shero, Phoenix, AZ (US); and Paul Ma, Scottsdale, AZ (US)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Feb. 8, 2021, as Appl. No. 17/170,742.
Claims priority of provisional application 62/972,568, filed on Feb. 10, 2020.
Prior Publication US 2021/0249263 A1, Aug. 12, 2021
Int. Cl. H01L 21/02 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/02181 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02244 (2013.01); H01L 21/76837 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of depositing a hafnium oxide within a high aspect ratio hole in a substrate, the method comprising:
depositing a first hafnium-containing layer comprising hafnium nitride or hafnium carbide in the high aspect ratio hole; and
converting the first hafnium-containing layer to a second hafnium-containing layer comprising hafnium oxide by contacting the first hafnium-containing layer with an oxygen reactant until at least a portion of the hafnium nitride or hafnium carbide of the first hafnium-containing layer has been converted to hafnium oxide.