CPC H01L 21/02181 (2013.01) [H01L 21/0228 (2013.01); H01L 21/02244 (2013.01); H01L 21/76837 (2013.01)] | 20 Claims |
1. A method of depositing a hafnium oxide within a high aspect ratio hole in a substrate, the method comprising:
depositing a first hafnium-containing layer comprising hafnium nitride or hafnium carbide in the high aspect ratio hole; and
converting the first hafnium-containing layer to a second hafnium-containing layer comprising hafnium oxide by contacting the first hafnium-containing layer with an oxygen reactant until at least a portion of the hafnium nitride or hafnium carbide of the first hafnium-containing layer has been converted to hafnium oxide.
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