CPC H01L 21/02019 (2013.01) [H01L 21/30604 (2013.01); H01L 21/67086 (2013.01); H01S 5/0239 (2021.01)] | 5 Claims |
1. A structure production method, comprising:
preparing a wafer at least whose surface is composed of group III nitride crystals and having a non-conductive mask formed on the surface;
preparing an alkaline or acidic etching liquid containing a peroxodisulfate ion as an oxidizing agent that accepts an electron; and
irradiating the surface of the wafer with light, in a state where the surface of the wafer is immersed in the etching liquid heated so as to generate sulfate ion radicals, wherein in the irradiation of the light, the surface of the wafer is intermittently irradiated with the light.
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