US 11,791,137 B2
Apparatus for etching substrate bevel and semiconductor fabrication method using the same
Hakseung Lee, Seoul (KR); Ho-Jin Lee, Hwaseong-si (KR); Dong-Chan Lim, Hwaseong-si (KR); Jinnam Kim, Anyang-si (KR); and Kwangjin Moon, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 22, 2020, as Appl. No. 16/855,048.
Claims priority of application No. 10-2019-0104939 (KR), filed on Aug. 27, 2019.
Prior Publication US 2021/0066386 A1, Mar. 4, 2021
Int. Cl. H01J 37/32 (2006.01); H01L 21/67 (2006.01)
CPC H01J 37/32642 (2013.01) [H01J 37/32715 (2013.01); H01L 21/67069 (2013.01); H01J 2237/334 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A bevel etching apparatus, comprising:
a chuck plate configured to receive a substrate;
a lower ring surrounding a circumference of the chuck plate;
a cover plate on the chuck plate; and
an upper ring surrounding a circumference of the cover plate,
wherein the lower ring includes:
a ring base having constant thickness and configured to support an edge of a bottom surface of the substrate; and
a protrusion extending upwardly from an edge of the ring base to surround a lower portion of a sidewall of the substrate,
wherein the protrusion has an inner diameter greater than an outer diameter of the upper ring,
wherein the protrusion has a height of 745 μm to 772 μm from a top surface of the ring base,
wherein the bevel etching apparatus further comprises a bias electrode comprising a lower electrode and an upper electrode,
wherein an upper surface of the lower electrode is below and spaced apart from the lower ring, and
wherein a lower surface of the upper electrode is above and spaced apart from the lower electrode and the upper ring.