US 11,791,007 B2
Leakage detection circuit, nonvolatile memory device including leakage detection circuit, and memory system including nonvolatile memory device
Byoung Sung You, Icheon-si (KR)
Assigned to SK hynix Inc., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jan. 14, 2022, as Appl. No. 17/576,480.
Claims priority of application No. 10-2021-0117179 (KR), filed on Sep. 2, 2021.
Prior Publication US 2023/0060971 A1, Mar. 2, 2023
Int. Cl. G11C 29/02 (2006.01); G11C 29/50 (2006.01)
CPC G11C 29/025 (2013.01) [G11C 29/50 (2013.01); G11C 2029/5004 (2013.01); G11C 2029/5006 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A leakage detection circuit comprising:
a comparison circuit configured to compare an input voltage, which changes based on the level of an operation voltage node, to a reference voltage and configured to output a detection signal; and
a state decision circuit configured to identify a determination period during which the detection signal has a first logic level, configured to determine a count value corresponding to a length of the determination period that is shorter as an amount of current leakage is greater, configured to compare the count value to multiple reference values, and configured to output leakage state information indicating one of at least three of leakage states based on a comparison result.