CPC G11C 16/3459 (2013.01) [G11C 16/102 (2013.01); G11C 16/3404 (2013.01)] | 20 Claims |
1. A method of operating a semiconductor memory device, the method comprising:
starting a program operation on selected memory cells using a main verification voltage and an auxiliary verification voltage in response to a program command;
receiving a program suspend command during the program operation; and
changing at least one auxiliary voltage verification result information among threshold voltage states which are not program-passed to at least one data pattern among threshold voltage states which program-passed, in response to the program suspend command.
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