US 11,791,001 B2
Non-volatile memory with updating of read compare voltages based on measured current
Yi Song, Santa Jose, CA (US); Jiahui Yuan, Fremont, CA (US); and Dengtao Zhao, Santa Clara, CA (US)
Assigned to SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed by SANDISK TECHNOLOGIES LLC, Addison, TX (US)
Filed on Mar. 21, 2022, as Appl. No. 17/699,508.
Prior Publication US 2023/0298678 A1, Sep. 21, 2023
Int. Cl. G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/28 (2006.01); G11C 16/10 (2006.01)
CPC G11C 16/3459 (2013.01) [G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/28 (2013.01); G11C 16/3404 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A non-volatile storage apparatus, comprising:
a plurality of non-volatile memory cells; and
one or more control circuits connected to the non-volatile memory cells, the one or more control circuits are configured to program data to the non-volatile memory cells, the one or more control circuits are configured to read the programmed data from the non-volatile memory cells using a set of read compare voltages, the one or more control circuits are configured to determine the read compare voltages based on a difference between memory cell current at time of programming and memory cell current at time of reading.