US 11,790,992 B2
State dependent VPVD voltages for more uniform threshold voltage distributions in a memory device
Yu-Chung Lien, San Jose, CA (US); and Huai-yuan Tseng, San Ramon, CA (US)
Assigned to SanDisk Technologies LLC, Addison, TX (US)
Filed by SanDisk Technologies LLC, Addison, TX (US)
Filed on Jun. 28, 2021, as Appl. No. 17/359,989.
Prior Publication US 2022/0415399 A1, Dec. 29, 2022
Int. Cl. G11C 16/26 (2006.01); G11C 16/06 (2006.01); G11C 16/10 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 11/56 (2006.01); G11C 16/34 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01)
CPC G11C 16/10 (2013.01) [G11C 11/5628 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/3459 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02)] 13 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a non-volatile memory including a control circuitry that is communicatively coupled to a memory block that includes an array of memory cells which are arranged in a plurality of word lines, wherein the control circuitry is configured to program the memory cells of the plurality of word lines in a plurality of programming loops, the programming loops including:
applying a programming pulse to a selected word line of the plurality of word lines to program at least one memory cell of the selected word line to a programmed data state; and
simultaneously applying a verify pulse to the selected word line to verify a data state being programmed, applying a first voltage to at least one unselected word line that has not been programmed, and applying a second voltage to at least one unselected word line that has already been programmed, the first voltage being determined as a function of the programmed data state to reduce a voltage threshold distribution across the memory cells in the memory block.