US 11,790,982 B2
Circuits for power down leakage reduction in random-access memory
Ankur Gupta, Bangalore (IN); Manish Chandra Joshi, Bangalore (IN); and Parvinder Kumar Rana, Bangalore (IN)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 27, 2021, as Appl. No. 17/443,480.
Claims priority of application No. 202041032118 (IN), filed on Jul. 27, 2020.
Prior Publication US 2022/0028449 A1, Jan. 27, 2022
Int. Cl. G11C 11/4093 (2006.01); G11C 11/408 (2006.01); G11C 5/14 (2006.01); G11C 5/06 (2006.01); G11C 11/4074 (2006.01)
CPC G11C 11/4093 (2013.01) [G11C 5/06 (2013.01); G11C 5/14 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A wordline driver circuit for a random-access memory (RAM) configured to reduce leakage during a power down mode, the wordline driver circuit comprising:
a pre-driver stage comprising:
a strap buffer defining a header and comprising a first switch that is configured to connect a first set of wordlines to a first voltage; and
an input-output buffer defining a footer and comprising a second switch that is configured to connect a second set of wordlines to a second voltage,
wherein the strap buffer further comprises a third switch that is connected between inverters and the first voltage and is configured to connect the second set of wordlines to the first voltage.