US 11,790,967 B2
Magnetic domain wall displacement element, magnetic recording array, and semiconductor device
Shogo Yamada, Tokyo (JP); Tatsuo Shibata, Tokyo (JP); and Yugo Ishitani, Tokyo (JP)
Assigned to TDK CORPORATION, Tokyo (JP)
Appl. No. 17/420,053
Filed by TDK CORPORATION, Tokyo (JP)
PCT Filed May 15, 2020, PCT No. PCT/JP2020/019387
§ 371(c)(1), (2) Date Jun. 30, 2021,
PCT Pub. No. WO2020/230877, PCT Pub. Date Nov. 19, 2020.
Claims priority of application No. 2019-092181 (JP), filed on May 15, 2019; and application No. 2020-061064 (JP), filed on Mar. 30, 2020.
Prior Publication US 2022/0051708 A1, Feb. 17, 2022
Int. Cl. G11C 11/16 (2006.01); H01L 29/82 (2006.01); H10N 50/10 (2023.01); H01L 27/105 (2023.01); G11C 11/15 (2006.01)
CPC G11C 11/161 (2013.01) [G11C 11/1675 (2013.01); H01L 29/82 (2013.01); H10N 50/10 (2023.02); G11C 11/15 (2013.01); H01L 27/105 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A magnetic domain wall displacement element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer positioned in a first direction with respect to the first ferromagnetic layer, extending in a second direction different from the first direction, and magnetically recordable;
a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and
a first conductive part including a first intermediate layer and a second conductive part including a second intermediate layer which are spaced apart from each other and connected to the second ferromagnetic layer, wherein
the first intermediate layer is sandwiched between a first magnetization region exhibiting a first magnetization direction and a second magnetization region exhibiting a second magnetization direction different from the first magnetization direction in the first direction,
the second intermediate layer is sandwiched between a third magnetization region exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction,
an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction, and
a first surface of the third magnetization region on a side opposite to a surface of the third magnetization region in contact with the second intermediate layer in the first direction is inclined with respect to a surface perpendicular to the first direction.