US 11,790,150 B2
Placement and simulation of cell in proximity to cell with diffusion break
Deepak Dattatraya Sherlekar, Cupertino, CA (US); and Shanie George, San Jose, CA (US)
Assigned to Synopsys, Inc., Sunnyvale, CA (US)
Filed by Synopsys, Inc., Mountain View, CA (US)
Filed on Jun. 14, 2022, as Appl. No. 17/840,498.
Application 17/840,498 is a continuation of application No. 17/093,457, filed on Nov. 9, 2020, granted, now 11,403,454.
Prior Publication US 2022/0309223 A1, Sep. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G06F 30/398 (2020.01); G06F 30/392 (2020.01); G06F 30/367 (2020.01)
CPC G06F 30/398 (2020.01) [G06F 30/367 (2020.01); G06F 30/392 (2020.01)] 20 Claims
OG exemplary drawing
 
1. A non-transitory computer readable medium storing data representing a layout of a first cell of an integrated circuit, the first cell of the integrated circuit comprising:
a first edge;
a second edge at an opposite side to the first edge of the first cell;
a diffusion region extending from the first edge to the second edge; and
a break in the diffusion region dividing the diffusion region into a first diffusion region and a second diffusion region spaced by the break in the diffusion region, the break in the diffusion region spaced away from a third edge of a second cell by a specified distance that degrades a metric of the second cell beyond a threshold level,
wherein the non-transitory computer readable medium stores a simulation model associated with the third edge spaced away from the break in the diffusion region by the specified distance that is less than or equal to a threshold distance, and
a simulation of the second cell is performed using the simulation model.