US 11,789,808 B2
Memory devices for performing repair operation, memory systems including the same, and operating methods thereof
Yongsang Park, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd.
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 13, 2022, as Appl. No. 17/720,215.
Application 17/720,215 is a continuation of application No. 16/934,748, filed on Jul. 21, 2020, granted, now 11,334,423.
Claims priority of application No. 10-2019-0175040 (KR), filed on Dec. 26, 2019.
Prior Publication US 2022/0245021 A1, Aug. 4, 2022
Int. Cl. G06F 11/00 (2006.01); G06F 11/07 (2006.01); G11C 8/08 (2006.01)
CPC G06F 11/0793 (2013.01) [G06F 11/0727 (2013.01); G06F 11/0751 (2013.01); G11C 8/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a normal wordline activation logic circuit configured to output a normal wordline activation signal in response to an active row address being matched;
a first redundancy circuit configured to output a post package repair (PPR) wordline activation signal and activate a PPR wordline in response to the active row address being matched; and
at least one second redundancy circuit configured to output a soft post package repair (sPPR) wordline activation signal and activate a sPPR wordline in response to the active row address being matched,
wherein the at least one second redundancy circuit is inactivated and the sPPR wordline is not activated in response to the at least one second redundancy circuit receiving old data access information.