US 11,789,796 B2
Selective reading of memory with improved accuracy
Wayne Kinney, Emmett, ID (US); and Gurtej S. Sandhu, Boise, ID (US)
Assigned to Ovonyx Memory Technology, LLC, Alexandria, VA (US)
Filed by Ovonyx Memory Technology, LLC, Alexandria, VA (US)
Filed on Jun. 17, 2022, as Appl. No. 17/843,237.
Application 17/843,237 is a division of application No. 16/791,674, filed on Feb. 14, 2020, granted, now 11,379,286.
Application 16/791,674 is a division of application No. 15/658,066, filed on Jul. 24, 2017, granted, now 10,585,735, issued on Mar. 10, 2020.
Application 14/681,471 is a division of application No. 13/804,598, filed on Mar. 14, 2013, granted, now 9,025,364, issued on May 5, 2015.
Application 15/658,066 is a continuation of application No. 14/681,471, filed on Apr. 8, 2015, granted, now 9,715,419, issued on Jul. 25, 2017.
Prior Publication US 2022/0318084 A1, Oct. 6, 2022
Int. Cl. G06F 11/07 (2006.01); G11C 29/04 (2006.01); G11C 11/16 (2006.01); G11C 29/02 (2006.01)
CPC G06F 11/0751 (2013.01) [G06F 11/0727 (2013.01); G11C 11/16 (2013.01); G11C 11/1673 (2013.01); G11C 11/1677 (2013.01); G11C 29/021 (2013.01); G11C 2029/0411 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory array comprising:
one or more memory cells to store data and corresponding error correction codes;
an error correction component configured to identify errors in codewords and to correct the errors in the codewords;
a first circuit configured to generate a reference signal;
a second circuit configured to generate a self-reference signal; and
a sense output circuit configured to:
perform a first comparison of the reference signal and a first value read from a selected memory cell of the memory array, the first value read being associated with a first read operation;
detect an error condition associated with the first comparison; and
perform, after the first comparison and based at least in part on the error condition, a second comparison of the self-reference signal and a second value read from the selected memory cell of the memory array, the second value read being associated with a second read operation.