CPC G03F 7/0042 (2013.01) [C07F 7/2224 (2013.01); G03F 1/22 (2013.01); G03F 7/0751 (2013.01); G03F 7/094 (2013.01); H01L 21/02118 (2013.01); H01L 21/467 (2013.01); H01L 21/47 (2013.01); H01L 21/475 (2013.01)] | 10 Claims |
1. A system of patterns, the system comprising:
a semiconductor resist composition to be coated on an etching subject layer to form a photoresist layer;
the photoresist layer being to be patterned to form a photoresist pattern; and
the etching subject layer being to be etched with the photoresist pattern as an etching mask,
wherein the semiconductor resist composition comprises:
an organometallic compound represented by Chemical Formula 1, and
a solvent:
wherein, in Chemical Formula 1,
R1 is selected from a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and —Rc—O—Rd, wherein Rc is a substituted or unsubstituted C1 to C20 alkylene group and Rd is a substituted or unsubstituted C1 to C20 alkyl group,
R2 to R4 are each independently selected from —ORa and —OC(═O)Rb, wherein at least one of R2 to R4 is —OC(═O)Rb,
Ra is selected from a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof, and
Rb is selected from hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof.
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