US 11,789,361 B2
Semiconductor resist composition, and method of forming patterns using the composition
Kyung Soo Moon, Suwon-si (KR); Jaehyun Kim, Suwon-si (KR); Yoong Hee Na, Suwon-si (KR); Ran Namgung, Suwon-si (KR); Hwansung Cheon, Suwon-si (KR); and Seungyong Chae, Suwon-si (KR)
Assigned to Samsung SDI Co., Ltd., Yongin-si (KR)
Filed by SAMSUNG SDI CO., LTD., Yongin-si (KR)
Filed on Jun. 28, 2021, as Appl. No. 17/361,235.
Application 17/361,235 is a division of application No. 16/712,701, filed on Dec. 12, 2019, granted, now 11,092,890.
Application 16/712,701 is a continuation in part of application No. 16/211,145, filed on Dec. 5, 2018, granted, now 11,092,889.
Claims priority of application No. 10-2018-0089414 (KR), filed on Jul. 31, 2018; and application No. 10-2019-0090516 (KR), filed on Jul. 25, 2019.
Prior Publication US 2021/0325781 A1, Oct. 21, 2021
Int. Cl. G03F 7/004 (2006.01); H01L 21/02 (2006.01); G03F 7/09 (2006.01); C07F 7/22 (2006.01); G03F 7/075 (2006.01); H01L 21/467 (2006.01); H01L 21/475 (2006.01); H01L 21/47 (2006.01); G03F 1/22 (2012.01)
CPC G03F 7/0042 (2013.01) [C07F 7/2224 (2013.01); G03F 1/22 (2013.01); G03F 7/0751 (2013.01); G03F 7/094 (2013.01); H01L 21/02118 (2013.01); H01L 21/467 (2013.01); H01L 21/47 (2013.01); H01L 21/475 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A system of patterns, the system comprising:
a semiconductor resist composition to be coated on an etching subject layer to form a photoresist layer;
the photoresist layer being to be patterned to form a photoresist pattern; and
the etching subject layer being to be etched with the photoresist pattern as an etching mask,
wherein the semiconductor resist composition comprises:
an organometallic compound represented by Chemical Formula 1, and
a solvent:

OG Complex Work Unit Chemistry
wherein, in Chemical Formula 1,
R1 is selected from a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C6 to C30 benzyl group, and —Rc—O—Rd, wherein Rc is a substituted or unsubstituted C1 to C20 alkylene group and Rd is a substituted or unsubstituted C1 to C20 alkyl group,
R2 to R4 are each independently selected from —ORa and —OC(═O)Rb, wherein at least one of R2 to R4 is —OC(═O)Rb,
Ra is selected from a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof, and
Rb is selected from hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C20 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, a substituted or unsubstituted C6 to C30 aryl group, and combinations thereof.