US 11,789,168 B2
Ionizing radiation detector
Gilles Gasiot, Seyssinet-Pariset (FR); and Fady Abouzeid, La Terrasse (FR)
Assigned to STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed by STMicroelectronics (Crolles 2) SAS, Crolles (FR)
Filed on Aug. 23, 2021, as Appl. No. 17/408,679.
Application 17/408,679 is a continuation of application No. 16/677,005, filed on Nov. 7, 2019, granted, now 11,131,782.
Claims priority of application No. 1871486 (FR), filed on Nov. 12, 2018.
Prior Publication US 2021/0382189 A1, Dec. 9, 2021
Int. Cl. G01T 1/24 (2006.01); H01L 27/07 (2006.01); H01L 31/103 (2006.01)
CPC G01T 1/248 (2013.01) [G01T 1/247 (2013.01); H01L 27/0761 (2013.01); H01L 31/103 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method for detecting an ionizing radiation, comprising:
connecting a first doped region and a second doped region of a PN junction directly to source and drain nodes, respectively, of a first transistor;
in response to said ionizing radiation crossing through both said PN junction and said first transistor:
generating a first current through the PN junction causing a reduction in potential at the first doped region; and
generating a second current through a source-drain path of the first transistor causing a further reduction in potential at the first doped region; and
applying the further reduced potential at the first doped region to a back gate of said first transistor.