US 11,789,097 B2
Magnetoresistive sensors and methods for generating closed flux magnetization patterns
Dirk Hammerschmidt, Finkenstein (AT); Armin Satz, Villach (AT); and Juergen Zimmer, Neubiberg (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on May 3, 2021, as Appl. No. 17/246,820.
Application 17/246,820 is a continuation of application No. 16/001,060, filed on Jun. 6, 2018, granted, now 11,009,568.
Claims priority of application No. 10 2017 112 546.9 (DE), filed on Jun. 7, 2017.
Prior Publication US 2021/0255255 A1, Aug. 19, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 33/09 (2006.01); H01F 41/30 (2006.01); H01F 10/32 (2006.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC G01R 33/093 (2013.01) [H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 41/304 (2013.01); H01F 41/308 (2013.01); H10N 50/10 (2023.02); H10N 50/85 (2023.02)] 22 Claims
OG exemplary drawing
 
1. A method for generating closed flux magnetization patterns of predetermined rotational directions in a magnetic reference layer and a pinned layer of a magnetic layer stack, the method comprising:
applying an external magnetic field in a predetermined direction to the magnetic layer stack causing magnetic saturation of the magnetic reference layer and of the pinned layer of the magnetic layer stack; and
reducing the external magnetic field to form a first closed flux magnetization pattern in the magnetic reference layer and a second closed flux magnetization pattern in the pinned layer.