US 11,788,203 B2
Indium phosphide substrate, semiconductor epitaxial wafer, and method for producing indium phosphide substrate
Shunsuke Oka, Kitaibaraki (JP); Hideki Kurita, Kitaibaraki (JP); and Kenji Suzuki, Kitaibaraki (JP)
Assigned to JX METALS CORPORATION, Tokyo (JP)
Appl. No. 17/289,455
Filed by JX METALS CORPORATION, Tokyo (JP)
PCT Filed Jun. 4, 2020, PCT No. PCT/JP2020/022196
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2021/106247, PCT Pub. Date Jun. 3, 2021.
Claims priority of application No. 2019-217549 (JP), filed on Nov. 29, 2019; and application No. 2020-078634 (JP), filed on Apr. 27, 2020.
Prior Publication US 2022/0316092 A1, Oct. 6, 2022
Int. Cl. B32B 3/00 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); C30B 33/10 (2006.01); H01L 21/02 (2006.01)
CPC C30B 25/186 (2013.01) [C30B 29/403 (2013.01); C30B 33/10 (2013.01); H01L 21/02019 (2013.01); H01L 21/02021 (2013.01); H01L 21/02024 (2013.01)] 7 Claims
 
1. An indium phosphide substrate comprising a main surface for forming an epitaxial crystal layer and a back surface opposite to the main surface,
wherein the back surface has a SORI value of 2.5 μm or less, as measured with the back surface of the indium phosphide substrate facing upward.