CPC C30B 13/20 (2013.01) [C30B 13/12 (2013.01); C30B 13/26 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02625 (2013.01)] | 12 Claims |
1. A method for producing a single crystal of semiconductor material doped with dopant, comprising:
creating a molten zone between a feed rod and a growing single crystal;
melting material of the feed rod in a high frequency magnetic field of a first induction coil;
crystallizing material of the molten zone on top of the growing single crystal;
rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and
imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.
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