US 11,788,201 B2
Method for producing a single crystal from semiconductor material by the FZ method; device for carrying out the method and semiconductor silicon wafer
Ludwig Altmannshofer, Lenggries (DE); Goetz Meisterernst, Mettenheim (DE); Gundars Ratnieks, Burghausen (DE); and Simon Zitzelsberger, Neuoetting/Alzgern (DE)
Assigned to Siltronic AG, Munich (DE)
Appl. No. 17/256,138
Filed by SILTRONIC AG, Munich (DE)
PCT Filed Jun. 4, 2019, PCT No. PCT/EP2019/064554
§ 371(c)(1), (2) Date Dec. 24, 2020,
PCT Pub. No. WO2020/001940, PCT Pub. Date Jan. 2, 2020.
Claims priority of application No. 10 2018 210 317.8 (DE), filed on Jun. 25, 2018.
Prior Publication US 2021/0222319 A1, Jul. 22, 2021
Int. Cl. C30B 13/20 (2006.01); C30B 13/12 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01); H01L 21/02 (2006.01); C30B 13/26 (2006.01)
CPC C30B 13/20 (2013.01) [C30B 13/12 (2013.01); C30B 13/26 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02625 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for producing a single crystal of semiconductor material doped with dopant, comprising:
creating a molten zone between a feed rod and a growing single crystal;
melting material of the feed rod in a high frequency magnetic field of a first induction coil;
crystallizing material of the molten zone on top of the growing single crystal;
rotating the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of rotation according to a predetermined pattern; and
imposing an alternating magnetic field of a second induction coil on the molten zone, wherein the alternating magnetic field is not axisymmetric with respect to the axis of rotation of the growing single crystal.