US 11,788,183 B2
Method for growing crystalline optical films on Si substrates which may optionally have an extremely small optical loss in the infra-red spectrum with hydrogenation of the crystalline optical films
Kyung-Ah Son, Moorpark, CA (US); Jeong-Sun Moon, Moorpark, CA (US); Hwa Chang Seo, Malibu, CA (US); Richard M. Kremer, Ramona, CA (US); Ryan G. Quarfoth, Malibu, CA (US); Jack A. Crowell, Malibu, CA (US); Mariano J. Taboada, Malibu, CA (US); Joshua M. Doria, Malibu, CA (US); and Terry B. Welch, Malibu, CA (US)
Assigned to HRL LABORATORIES, LLC, Malibu, CA (US)
Filed by HRL Laboratories, LLC, Malibu, CA (US)
Filed on Mar. 19, 2021, as Appl. No. 17/206,927.
Claims priority of provisional application 63/027,849, filed on May 20, 2020.
Claims priority of provisional application 63/027,847, filed on May 20, 2020.
Prior Publication US 2021/0363629 A1, Nov. 25, 2021
Int. Cl. C23C 14/35 (2006.01); C23C 14/08 (2006.01)
CPC C23C 14/08 (2013.01) [C23C 14/35 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of growing a stoichiometric crystalline IR-transparent Phase-Change Correlated Transition Metal Oxide (PCMO) optical film of a desired thickness on a substrate, the method comprising:
a. heating the substrate to a temperature at least equal to the temperature of crystallization of a PCMO material to be deposited thereon in an oxygen-free gas environment,
b. depositing the PCMO material onto the substrate while at said temperature at least equal to the temperature of crystallization of the PCMO material;
c. cooling the substrate with the PCMO material deposited thereon to a temperature substantially less than the temperature of crystallization of the PCMO material in an oxygen-free gas environment;
d. heating the substrate previously cooled at step c to a temperature at least equal to the temperature of crystallization of the PCMO material to be deposited thereon in an oxygen-free gas environment,
e. depositing the PCMO material onto previously deposited PCMO material while at said temperature at least equal to the temperature of crystallization of the PCMO material; and
f. repeating steps c, d and e until said desired thickness of the PCMO optical film on the substrate is obtained.