CPC C09K 11/642 (2013.01) [B82Y 5/00 (2013.01); C09K 11/02 (2013.01); C09K 11/08 (2013.01); C09K 11/0883 (2013.01); C09K 11/565 (2013.01); C09K 11/62 (2013.01); C09K 11/64 (2013.01); C30B 7/14 (2013.01); C30B 29/403 (2013.01); H01L 33/32 (2013.01); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/502 (2013.01); Y10S 977/774 (2013.01); Y10S 977/817 (2013.01); Y10S 977/824 (2013.01); Y10S 977/892 (2013.01); Y10S 977/95 (2013.01)] | 10 Claims |
1. A quantum dot comprising:
a nano-seed particle made of group II-VI semiconductor material containing ZnOS, the nano-seed particle having a particular crystal plane exposed; and
a first epitaxial layer formed on the particular crystal plane of the nano-seed particle and made of Inx(AlmGan)1-xN (0.15≤x≤1.0, m+n=1.0).
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