CPC B32B 15/043 (2013.01) [B32B 7/12 (2013.01); B32B 15/20 (2013.01); C23C 14/0605 (2013.01); C23C 14/48 (2013.01); B32B 2255/06 (2013.01); B32B 2255/20 (2013.01); B82Y 30/00 (2013.01); H05K 7/2039 (2013.01); Y10T 428/30 (2015.01)] | 14 Claims |
1. A method of fabricating a high heat radiation thin film, the method comprising:
preparing a copper substrate having a first surface and a second surface that is opposite the first surface;
forming a preliminary carbon layer by providing carbon atoms onto the first surface of the copper substrate;
rearranging the carbon atoms to form a first carbon layer that includes graphene, wherein the first carbon layer that includes graphene is formed on the first surface of the copper substrate, wherein the first carbon layer that includes graphene is formed by performing a heat treatment on the first copper substrate and the preliminary carbon layer at between 600° C. and 800° C., wherein the first carbon layer that includes graphene is formed under an oxygen-free and hydrogen-free atmosphere, and wherein the carbon layer that includes graphene has a thermal conductivity that is (i) higher than a thermal conductivity of the preliminary carbon layer and (ii) more than 409 W/mK;
after forming the first carbon layer that includes graphene, forming a second carbon layer on the second surface of the copper substrate, wherein the second carbon layer is formed by preparing a carbon coating material comprising graphite powder and a binder, and applying the carbon coating material to the second surface of the copper substrate, and wherein the second carbon layer is thicker than the first carbon layer that includes graphene; and
forming a pressure sensitive adhesion film on the second carbon layer,
wherein a thickness of the first carbon layer that includes graphene is more than 2.5 nm and less than 10 nm.
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