US 11,787,083 B2
Production facility for separating wafers from donor substrates
Marko Swoboda, Dresden (DE); Christian Beyer, Freiberg (DE); Ralf Rieske, Dresden (DE); Albrecht Ullrich, Dresden (DE); and Jan Richter, Dresden (DE)
Assigned to Siltectra GmbH, Dresden (DE)
Appl. No. 16/637,877
Filed by Siltectra GmbH, Dresden (DE)
PCT Filed Aug. 7, 2018, PCT No. PCT/EP2018/071438
§ 371(c)(1), (2) Date Feb. 10, 2020,
PCT Pub. No. WO2019/030247, PCT Pub. Date Feb. 14, 2019.
Claims priority of application No. 102017007586.7 (DE), filed on Aug. 11, 2017.
Prior Publication US 2020/0254650 A1, Aug. 13, 2020
Int. Cl. B28D 5/00 (2006.01); B23K 26/53 (2014.01); B23K 26/00 (2014.01); B23K 103/00 (2006.01)
CPC B28D 5/0011 (2013.01) [B23K 26/0006 (2013.01); B23K 26/53 (2015.10); B28D 5/0064 (2013.01); B23K 2103/56 (2018.08)] 21 Claims
OG exemplary drawing
 
1. A production facility for separating wafers from donor substrates, the production facility comprising:
an analysis device configured to determine at least one individual property of a respective donor substrate, the at least one individual property comprising doping and/or crystal lattice dislocations of the respective donor substrate;
a data device configured to generate donor substrate process data for the respective donor substrate, the donor substrate process data comprising analysis data of the analysis device, the analysis data describing the at least one individual property of the respective donor substrate;
a laser device configured to generate modifications inside the respective donor substrate to form a separating region inside the respective donor substrate, the laser device being operable as a function of the donor substrate process data of the respective donor substrate; and
a separating device configured to generate mechanical stresses inside the respective donor substrate to initiate and/or guide a crack for separating at least one wafer from the respective donor substrate.