US 11,786,995 B2
Nonplanar wafer and method for producing a nonplanar wafer
Jan Richter, Dresden (DE)
Assigned to Siltectra GmbH, Dresden (DE)
Appl. No. 15/543,878
Filed by SILTECTRA GmbH, Dresden (DE)
PCT Filed Jan. 13, 2016, PCT No. PCT/EP2016/050574
§ 371(c)(1), (2) Date Nov. 29, 2017,
PCT Pub. No. WO2016/113309, PCT Pub. Date Jul. 21, 2016.
Claims priority of application No. 10 2015 000 451.4 (DE), filed on Jan. 15, 2015.
Prior Publication US 2018/0001416 A1, Jan. 4, 2018
Int. Cl. B23K 26/53 (2014.01); B23K 26/0622 (2014.01); B28D 1/22 (2006.01); H01L 21/02 (2006.01); B23K 103/00 (2006.01); B23K 26/40 (2014.01); B23K 101/40 (2006.01)
CPC B23K 26/53 (2015.10) [B23K 26/0624 (2015.10); B28D 1/221 (2013.01); H01L 21/02002 (2013.01); B23K 26/40 (2013.01); B23K 2101/40 (2018.08); B23K 2103/52 (2018.08); B23K 2103/56 (2018.08)] 25 Claims
OG exemplary drawing
 
1. A method for producing a nonplanar wafer, the method comprising:
arranging a solid body in an area of a laser radiation source, the solid body delimited by a first surface portion and a second surface portion;
emitting radiation from the laser radiation source towards the solid body along a horizontal plane such that the radiation penetrates the solid body and produces a plurality of crystal lattice modifications, the crystal lattice modifications defining a first detachment region in the solid body, the first detachment region having a non-planar contour along the horizontal plane; and
separating a wafer from the solid body along the first detachment region.