US 11,786,990 B2
Laser etching apparatus and laser etching method using the same
Jooseob Ahn, Yongin-si (KR); Taekil Oh, Yongin-si (KR); Gyoowan Han, Yongin-si (KR); Yeonghwan Ko, Yongin-si (KR); and Yoongyeong Bae, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Jan. 20, 2020, as Appl. No. 16/747,490.
Claims priority of application No. 10-2019-0007581 (KR), filed on Jan. 21, 2019.
Prior Publication US 2020/0230740 A1, Jul. 23, 2020
Int. Cl. B23K 26/06 (2014.01); B23K 26/073 (2006.01); B23K 26/382 (2014.01); B23K 26/082 (2014.01); B23K 26/362 (2014.01); B23K 103/00 (2006.01)
CPC B23K 26/0604 (2013.01) [B23K 26/0648 (2013.01); B23K 26/0732 (2013.01); B23K 26/082 (2015.10); B23K 26/362 (2013.01); B23K 26/382 (2015.10); B23K 2103/50 (2018.08)] 20 Claims
OG exemplary drawing
 
1. A laser etching apparatus comprising:
a light source to emit a first laser beam having a first energy profile;
a beam expander to expand the first laser beam to have a Gaussian-profile;
a diffraction optical device to convert the expanded first laser beam having the Gaussian-profile to a second laser beam having a linear beam profile; and
a scanner to radiate the second laser beam upon an object along a circular path,
wherein the Gaussian profile has a strength of the beam concentrated at a center of the expanded first laser beam, and the linear beam profile has a strength of a beam which is substantially even and planarized overall of the second laser beam.