CPC B22F 12/00 (2021.01) [B33Y 10/00 (2014.12); B33Y 30/00 (2014.12); B33Y 70/00 (2014.12); B33Y 80/00 (2014.12); B05D 1/26 (2013.01); B05D 1/38 (2013.01); B05D 3/0254 (2013.01); B05D 3/065 (2013.01); B05D 5/12 (2013.01); H05K 1/092 (2013.01); H05K 3/12 (2013.01); H05K 3/125 (2013.01); H05K 3/1208 (2013.01); H05K 3/1241 (2013.01); H05K 3/1283 (2013.01)] | 18 Claims |
1. A method comprising:
providing an electrically insulating substrate;
depositing a quantity of first intermediary material onto the substrate in a pattern corresponding to a desired pattern of a first conductive structure;
adhering the first intermediary material to the substrate to form a first intermediate layer on a portion of the substrate such that the first intermediate layer maintains the desired pattern of the first conductive structure;
depositing a quantity of a precursor of a first electrically conductive material along the pattern of the first intermediate layer; and
providing sufficient energy to at least the quantity of precursor of a first electrically conductive material to enable migration and consolidation of the first electrically conductive material along the pattern of the first intermediate layer, forming a functional, electrically conductive top layer;
wherein at least one of the first electrically conductive material and its precursor has a wetting angle of less than 90° relative to the first intermediate layer, and a wetting angle greater than 90° relative to the substrate; and
wherein at least one of the depositing steps is an additive deposition step.
|