US 11,786,946 B2
Cleaning method and film forming apparatus
Sung Duk Son, Gyeonggi-do (KR); Shingo Hishiya, Nirasaki (JP); and Akinobu Kakimoto, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Mar. 15, 2019, as Appl. No. 16/354,619.
Claims priority of application No. 2018-051286 (JP), filed on Mar. 19, 2018.
Prior Publication US 2019/0283093 A1, Sep. 19, 2019
Int. Cl. B08B 9/08 (2006.01); C23C 16/44 (2006.01); B08B 5/00 (2006.01)
CPC B08B 9/08 (2013.01) [B08B 5/00 (2013.01); C23C 16/4405 (2013.01); B08B 2209/08 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of cleaning a film forming apparatus conducted after a film forming process by supplying a source gas and a reaction gas reactive with the source gas to produce a reaction product into a processing container to form a film of the reaction product on a substrate, the method comprising:
repeating, a plurality of times, a cycle including:
performing, at least one time, the film forming process of depositing a first film in the processing container and a second film in a source gas nozzle supplying the source gas into the processing container, the first film and the second film being different from each other;
performing, after the film forming process, a first cleaning process by supplying a first cleaning gas having an etching selection ratio of the second film to the first film that is greater than 1 from the source gas nozzle into the processing container so as to etch and remove the second film deposited in the source gas nozzle such that the deposited first film remains in the processing container; and
performing, after the first cleaning process is terminated, in a state in which the deposited first film remains in the processing container, a surface control process of supplying an additional gas into the processing container in a state in which the supply of the first cleaning gas is terminated; and
after repeating the cycle the plurality of times, performing a second cleaning process by supplying a second cleaning gas into the processing container so as to etch and remove at least the first film deposited in the processing container,
wherein in the surface control process, if the first film is an oxide film, an oxygen containing gas is selected as the additional gas, and if the first film is a nitride film, a nitrogen containing gas is selected as the additional gas.