US 10,433,425 B1
Three-dimensional high quality passive structure with conductive pillar technology
Kai Liu, San Diego, CA (US); Changhan Hobie Yun, San Diego, CA (US); Jonghae Kim, San Diego, CA (US); and Mario Francisco Velez, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Aug. 1, 2018, as Appl. No. 16/51,876.
Int. Cl. H05K 1/18 (2006.01); H05K 1/11 (2006.01); H05K 1/03 (2006.01); H05K 3/46 (2006.01); H05K 3/40 (2006.01); H05K 3/28 (2006.01); H05K 1/02 (2006.01)
CPC H05K 1/185 (2013.01) [H05K 1/0243 (2013.01); H05K 1/0306 (2013.01); H05K 1/115 (2013.01); H05K 3/284 (2013.01); H05K 3/4007 (2013.01); H05K 3/4038 (2013.01); H05K 3/46 (2013.01); H05K 2201/0175 (2013.01); H05K 2201/095 (2013.01); H05K 2201/1003 (2013.01); H05K 2201/1006 (2013.01); H05K 2203/1316 (2013.01)] 16 Claims
OG exemplary drawing
1. A device, comprising:
a substrate including a first RDL (first redistribution layer);
a 3D integrated passive device (three-dimensional integrated passive device) on the substrate;
a plurality of pillars on the substrate, each of the plurality of pillars taller than the 3D integrated passive device;
a molding compound on the substrate and surrounding the 3D integrated passive device and the plurality of pillars; and
a plurality of external interconnects coupled to the first RDL through the plurality of pillars, the 3D integrated passive device coupled to the plurality of external interconnects via the first RDL and the plurality of pillars.