US 11,758,822 B2
Magnetic memory element incorporating dual perpendicular enhancement layers
Zihui Wang, Mountain View, CA (US); and Yiming Huai, Pleasanton, CA (US)
Assigned to Avalanche Technology, Inc., Fremont, CA (US)
Filed by Avalanche Technology, Inc., Fremont, CA (US)
Filed on Jul. 22, 2022, as Appl. No. 17/871,147.
Application 17/871,147 is a continuation of application No. 17/156,562, filed on Jan. 23, 2021, granted, now 11,417,836.
Application 17/156,562 is a continuation in part of application No. 16/831,519, filed on Mar. 26, 2020, granted, now 10,910,555, issued on Feb. 2, 2021.
Application 16/831,519 is a continuation in part of application No. 16/112,323, filed on Aug. 24, 2018, granted, now 10,727,400, issued on Jul. 28, 2020.
Application 16/112,323 is a continuation of application No. 15/794,983, filed on Oct. 26, 2017, granted, now 10,079,338, issued on Sep. 18, 2018.
Application 15/794,983 is a continuation of application No. 14/797,458, filed on Jul. 13, 2015, granted, now 9,831,421, issued on Nov. 28, 2017.
Application 14/797,458 is a continuation in part of application No. 14/657,608, filed on Mar. 13, 2015, granted, now 9,318,179, issued on Apr. 19, 2016.
Application 14/657,608 is a continuation in part of application No. 14/560,740, filed on Dec. 4, 2014, granted, now 9,082,951, issued on Jul. 14, 2015.
Application 14/560,740 is a continuation in part of application No. 14/256,192, filed on Apr. 18, 2014, granted, now 9,647,202, issued on May 9, 2017.
Application 14/256,192 is a continuation in part of application No. 14/053,231, filed on Oct. 14, 2013, granted, now 9,070,855, issued on Jun. 30, 2015.
Application 14/053,231 is a continuation in part of application No. 14/026,163, filed on Sep. 13, 2013, granted, now 9,024,398, issued on May 5, 2015.
Application 14/026,163 is a continuation in part of application No. 13/277,187, filed on Oct. 19, 2011, abandoned.
Application 14/657,608 is a continuation of application No. 13/225,338, filed on Sep. 2, 2011, granted, now 9,019,758, issued on Apr. 28, 2015.
Application 14/026,163 is a continuation in part of application No. 13/029,054, filed on Feb. 16, 2011, granted, now 8,598,576, issued on Dec. 3, 2013.
Application 13/277,187 is a continuation in part of application No. 12/965,733, filed on Dec. 10, 2010, granted, now 8,623,452, issued on Jan. 7, 2014.
Claims priority of provisional application 61/483,314, filed on May 6, 2011.
Claims priority of provisional application 61/382,815, filed on Sep. 14, 2010.
Prior Publication US 2022/0376172 A1, Nov. 24, 2022
Int. Cl. H10N 50/10 (2023.01); G11C 11/15 (2006.01); G11C 11/16 (2006.01); H01F 10/32 (2006.01); H01F 41/30 (2006.01); H01L 29/66 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); B82Y 40/00 (2011.01)
CPC H10N 50/10 (2023.02) [G11C 11/15 (2013.01); G11C 11/16 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H01F 41/302 (2013.01); H01L 29/66984 (2013.01); H10B 61/22 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02); B82Y 40/00 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory element comprising:
a magnetic free layer structure including:
first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, said first and second magnetic free layers each comprising cobalt and iron; and
a first perpendicular enhancement layer (PEL) interposed between said first and second magnetic free layers;
an insulating tunnel junction layer formed adjacent to said first magnetic free layer opposite said first PEL;
a magnetic reference layer structure including:
first, second, and third magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, said first magnetic reference layer comprising cobalt and iron and formed adjacent to said insulating tunnel junction layer opposite said first magnetic free layer;
a second PEL interposed between said first and second magnetic reference layers and comprising any one of magnesium, tantalum, molybdenum, or tungsten; and
a third PEL interposed between said second and third magnetic reference layers and comprising any one of magnesium, tantalum, molybdenum, or tungsten;
an anti-ferromagnetic coupling layer formed adjacent to said third magnetic reference layer opposite said third PEL; and
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said third magnetic reference layer, said magnetic fixed layer having a second invariable magnetization direction substantially opposite to said first invariable magnetization direction.