CPC H10B 63/845 (2023.02) [H10B 53/20 (2023.02); H10B 53/30 (2023.02); H10N 70/063 (2023.02); H10N 70/231 (2023.02); H10N 70/245 (2023.02); H10N 70/826 (2023.02); H10N 70/841 (2023.02); H10N 70/882 (2023.02)] | 20 Claims |
1. An apparatus, comprising:
a first pillar comprising a first memory cell coupled with a first conductive line and a second conductive line that each comprise a first conductive material;
a second pillar comprising a second memory cell coupled with the second conductive line and a third conductive line that comprises the first conductive material; and
a second conductive material below the second conductive line, at least a portion of the second conductive material extending below an upper surface of the first pillar and an upper surface of the second pillar at a location between the first pillar and the second pillar.
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