US 11,758,724 B2
Memory device with memory string comprising segmented memory portions and method for fabricating the same
Guan-Wei Wu, Zhubei (TW); Yao-Wen Chang, Zhubei (TW); and I-Chen Yang, Miaoli County (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Feb. 4, 2021, as Appl. No. 17/167,221.
Prior Publication US 2022/0246637 A1, Aug. 4, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a substrate having an upper surface;
a laminated structure disposed on the substrate, the laminated structure comprising a plurality of insulating layers and a plurality of conductive layers alternately stacked along a first direction vertical to the upper surface; and
a memory string accommodated in the laminated structure along the first direction, the memory string comprising a memory layer and a channel layer, and the memory layer is disposed between the laminated structure and the channel layer,
wherein at least a portion of the memory layer and the insulating layers are overlapped along the first direction, the at least a portion of the memory layer comprises a plurality of memory portions, each of the memory portions corresponds to one layer of the conductive layers, and each of the memory portions completely surrounds the channel layer.