CPC H10B 12/315 (2023.02) [H01L 23/528 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 27/0605 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/1262 (2013.01); H10B 12/0335 (2023.02); H10B 12/05 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02); H10B 12/50 (2023.02)] | 20 Claims |
1. An integrated circuit (IC) device, comprising:
a transistor, comprising a first region and a second region, wherein one of the first region and the second region is a source region of the transistor and another one of the first region and the second region is a drain region of the transistor;
a capacitor coupled to the first region;
a bitline coupled to the second region;
an electrically conductive line; and
a bridge via to electrically couple the bitline and the electrically conductive line, where an electrically conductive material of the bridge via fills a gap between the bitline and the electrically conductive line.
|