| CPC H05K 1/0306 (2013.01) [C04B 35/587 (2013.01); C04B 35/597 (2013.01); H01L 21/0217 (2013.01); H01L 21/02227 (2013.01)] | 10 Claims |
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1. A substrate comprising a sintered body,
the sintered body having:
a crystal grain containing silicon nitride; and
a grain boundary phase,
wherein,
a thickness of the substrate is 0.4 mm or less,
a three-point bending strength of the substrate is 600 MPa or more,
the grain boundary phase includes glass compound phases provided in a region with a unit area of 100 μm×100 μm at a cross-section of the sintered body and having different compositions,
at least one of Raman spectra of the glass compound phases has:
a first peak in a Raman shift range from 440 cm-1 to 530 cm-1; and
a second peak in a Raman shift range from 990 cm-1 to 1060 cm-1,
when dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value εA of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value εB of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |εA−εB|≤0.1.
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