US 11,758,300 B2
Solid-state imaging device and imaging device with combined dynamic vision sensor and imaging functions
Pooria Mostafalu, Penfield, NY (US); and Frederick Brady, Webster, NY (US)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed on Jan. 24, 2022, as Appl. No. 17/582,361.
Application 17/582,361 is a continuation of application No. 16/574,555, filed on Sep. 18, 2019, granted, now 11,240,449.
Prior Publication US 2022/0150427 A1, May 12, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H04N 25/702 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01)
CPC H04N 25/702 (2023.01) [H01L 27/14605 (2013.01); H04N 25/75 (2023.01); H01L 27/14643 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a pixel array unit, wherein the pixel array unit includes:
a plurality of pixels; and
an isolation structure, wherein each pixel in the plurality of pixels is separated from one or more neighboring pixels in the plurality of pixels by the isolation structure, and wherein a pixel of the plurality of pixels includes:
a photoelectric conversion region;
a first transfer transistor;
a second transfer transistor;
a first readout circuit selectively coupled to the photoelectric conversion region by the first transfer transistor; and
a second readout circuit selectively coupled to the photoelectric conversion region by the second transfer transistor,
wherein, all transistor components of the first readout circuit are located in a first area of the pixel in a plan view below the photoelectric conversion region, and all transistor components of the second readout circuit are located in a second area of the pixel above the photoelectric conversion region in the plan view,
wherein the first readout circuit includes a floating diffusion layer and an amplification transistor, a selection transistor, or a reset transistor, and
wherein the second readout circuit includes a first log transistor and a first amplification transistor.