US 11,758,257 B2
Random access sensor with individually addressable transistors
Charles Adams Schneider, Jr., New Haven, CT (US); Brian Klembara, Monroe, MA (US); Rafael Domínguez Castro, Seville (ES); Jesús Ruiz Amaya, Seville (ES); Jose Angel Segovia de la Torre, Seville (ES); Bruno Gili, La Motte Servolex (FR); and Ana González Márquez, Seville (ES)
Assigned to PerkinElmer U.S. LLC, Waltham, MA (US)
Filed by PerkinElmer Health Sciences, Inc., Waltham, MA (US)
Filed on Nov. 19, 2020, as Appl. No. 16/952,418.
Claims priority of provisional application 62/947,579, filed on Dec. 13, 2019.
Prior Publication US 2021/0185199 A1, Jun. 17, 2021
Int. Cl. H04N 23/56 (2023.01); G01J 3/28 (2006.01)
CPC H04N 23/56 (2023.01) [G01J 3/2803 (2013.01)] 36 Claims
OG exemplary drawing
 
1. A circuit comprising:
a first transfer transistor connecting a photodiode to a floating diffusion node, wherein the first transfer transistor is individually selectable by a combination of:
(i) a first transfer select input; and
(ii) a second transfer select input;
a reset transistor connected between one or more potentials and the floating diffusion node, wherein the reset transistor is individually selectable by a combination of:
(i) a first reset select input; and
(ii) a second reset select input;
a first reset selection transistor having a gate terminal connected to (i) the first reset select input or (ii) the second reset select input, and the first reset selection transistor also being connected between (1) a gate terminal of the reset transistor and (2) the other of (a) the first reset select input or (b) the second reset select input;
an output transistor in a source-follower configuration with a gate connected to the floating diffusion node; and
a selection transistor connected to the output of the output transistor.