US 11,757,632 B2
Generating a random value based on a noise characteristic of a memory cell
David L. Miller, Boise, ID (US); and Michael T. Brady, Loveland, CO (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 19, 2018, as Appl. No. 16/226,558.
Prior Publication US 2020/0204367 A1, Jun. 25, 2020
Int. Cl. H04L 9/08 (2006.01); G06F 3/06 (2006.01); G06F 21/60 (2013.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 16/04 (2006.01)
CPC H04L 9/0869 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0659 (2013.01); G06F 3/0673 (2013.01); G06F 21/602 (2013.01); G11C 16/26 (2013.01); G11C 16/34 (2013.01); G11C 16/0483 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A system comprising:
a memory component; and
a processing device, operatively coupled with the memory component, to:
receive a request to generate one or more random values;
in response to receiving the request to generate the one or more random values;
perform a first read operation on a memory cell of the memory component to retrieve first data using an optimal read threshold voltage for the memory cell configured to have a fewest number of read errors;
determine a misaligned read threshold voltage for the memory cell different from the optimal read threshold voltage; and
perform a second read operation on the same memory cell of the memory component to retrieve second data using the misaligned read threshold voltage;
compare a first value of a first bit of the first data with a second value of a second bit of the second data to identify a difference between the first value of the first bit of the first data and the second value of the second bit of the second data, the difference being associated with a noise characteristic of the memory cell;
determine whether the difference is one of a first difference associated with the noise characteristic of the memory cell or a second difference associated with the noise characteristic of the memory cell, wherein the first difference is indicative of the first value of the first bit of the first data exceeding the second value of the second bit of the second data, and wherein the second difference is indicative of the second value of the second bit of the second data exceeding the first value of the first bit of the first data; and
generate at least one bit of the one or more random values, wherein the at least one bit has a first bit value or a second bit value, wherein the first bit value is responsive to the difference between the first value of the first bit of the first data and the second value of the second bit of the second data being the first difference associated with the noise characteristic of the memory cell and the second bit value is responsive to the difference between the first value of the first bit of the first data and the second value of the second bit of the second data being the second difference associated with the noise characteristic of the memory cell.