US 11,757,347 B2
High-side gate drive voltage generation circuit and semiconductor module
Narumi Matsushita, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Sep. 28, 2021, as Appl. No. 17/488,114.
Claims priority of application No. 2020-207681 (JP), filed on Dec. 15, 2020.
Prior Publication US 2022/0190717 A1, Jun. 16, 2022
Int. Cl. H02M 1/08 (2006.01); H02M 1/00 (2006.01); H02M 1/32 (2007.01)
CPC H02M 1/08 (2013.01) [H02M 1/0006 (2021.05); H02M 1/32 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A voltage generation circuit configured to generate a control power supply voltage for a high-side drive circuit for operating the high-side drive circuit that controls a state of a high-side switching element, the high-side switching element and a low-side switching element connected in series with each other, the voltage generation circuit comprising:
a bootstrap circuit including a diode having a cathode connected to a high potential side of the high-side drive circuit to which the control power supply voltage for the high-side drive circuit is applied, and a current limiting resistor connected in series to the diode; and
a step-down circuit connected to a high potential side of the high-side switching element and an input side of the bootstrap circuit, and configured to output a compensated power supply voltage to the bootstrap circuit, the compensated power supply voltage being generated by stepping down a power supply voltage which is applied to the high potential side of the high-side switching element, and being a voltage for generating the control power supply voltage for the high-side drive circuit via the bootstrap circuit, wherein
the step-down circuit generates the compensated power supply voltage obtained by adding a compensation voltage corresponding to a voltage drop due to the diode and the current limiting resistor to a control power supply voltage for a low-side drive circuit for operating the low-side drive circuit that controls a state of the low-side switching element.