US 11,757,259 B2
Edge-emitting semiconductor laser and method for producing an edge-emitting semiconductor laser
Martin Mueller, Bernhardswald (DE)
Assigned to OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg (DE)
Appl. No. 17/637,223
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Aug. 18, 2020, PCT No. PCT/EP2020/073098
§ 371(c)(1), (2) Date Feb. 22, 2022,
PCT Pub. No. WO2021/037607, PCT Pub. Date Mar. 4, 2021.
Claims priority of application No. 10 2019 212 746.0 (DE), filed on Aug. 26, 2019.
Prior Publication US 2022/0285919 A1, Sep. 8, 2022
Int. Cl. H01S 5/00 (2006.01); H01S 5/40 (2006.01); H01S 5/125 (2006.01); H01S 5/20 (2006.01); H01S 5/30 (2006.01)
CPC H01S 5/4043 (2013.01) [H01S 5/125 (2013.01); H01S 5/2036 (2013.01); H01S 5/3095 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An edge emitting semiconductor laser comprising
first and second laser diodes, each of which is configured to generate electromagnetic radiation, wherein
the first and second laser diodes are arranged one above another in a vertical direction,
the first and second laser diodes are monolithically connected to one another,
one or a plurality of frequency-stabilizing element are arranged in an end region of the first and second laser diodes, wherein the second laser diode regionally is not covered by the first laser diode arranged above the second laser diode in a vertical direction and has one of the frequency-stabilizing elements in the uncovered region, and
at least one of the first and second laser diodes comprises:
first and second cladding layers,
first and second propagation layers positioned between the first and second cladding layers, wherein vertical extents of a beam profile are based upon a refractive index of the first and second propagation layers, and
an active zone positioned between the first and second propagation layers.