US 11,757,064 B2
Semiconductor nanoparticle, method for manufacturing same, and light emitting device
Tsukasa Torimoto, Nagoya (JP); Tatsuya Kameyama, Nagoya (JP); Yuki Mori, Nagoya (JP); Hiroki Yamauchi, Nagoya (JP); Susumu Kuwabata, Ibaraki (JP); Taro Uematsu, Suita (JP); and Daisuke Oyamatsu, Tokushima (JP)
Assigned to National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
Filed by National University Corporation Tokai National Higher Education and Research System, Nagoya (JP); OSAKA UNIVERSITY, Suita (JP); and NICHIA CORPORATION, Anan (JP)
Filed on Mar. 11, 2020, as Appl. No. 16/815,359.
Claims priority of application No. 2019-044832 (JP), filed on Mar. 12, 2019.
Prior Publication US 2020/0295227 A1, Sep. 17, 2020
Int. Cl. H01L 33/06 (2010.01); H01L 33/00 (2010.01); B82Y 40/00 (2011.01); B82Y 15/00 (2011.01)
CPC H01L 33/06 (2013.01) [B82Y 15/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0033 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor nanoparticle comprising:
performing a heat treatment of a first mixture containing a silver (Ag) salt, a first lithium (Li) salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent,
wherein a ratio of a number of atoms of Li to a total number of atoms of Ag and Li in the first mixture is greater than 0 and less than 1, and
wherein the semiconductor nanoparticle has a composition in which a content of sulfur is 35 mol % to 55 mol %.