CPC H01L 33/06 (2013.01) [B82Y 15/00 (2013.01); B82Y 40/00 (2013.01); H01L 33/0095 (2013.01); H01L 2933/0033 (2013.01)] | 4 Claims |
1. A method for manufacturing a semiconductor nanoparticle comprising:
performing a heat treatment of a first mixture containing a silver (Ag) salt, a first lithium (Li) salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent,
wherein a ratio of a number of atoms of Li to a total number of atoms of Ag and Li in the first mixture is greater than 0 and less than 1, and
wherein the semiconductor nanoparticle has a composition in which a content of sulfur is 35 mol % to 55 mol %.
|