US 11,757,047 B2
Semiconducting metal oxide transistors having a patterned gate and methods for forming the same
Yong-Jie Wu, Hsinchu (TW); Yen-Chung Ho, Hsinchu (TW); Hui-Hsien Wei, Taoyuan (TW); Chia-Jung Yu, Hsinchu (TW); Pin-Cheng Hsu, Zhubei (TW); Mauricio Manfrini, Zhubei (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Mar. 30, 2021, as Appl. No. 17/216,747.
Claims priority of provisional application 63/031,720, filed on May 29, 2020.
Prior Publication US 2021/0376164 A1, Dec. 2, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01)
CPC H01L 29/78696 (2013.01) [H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/41775 (2013.01); H01L 29/42364 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first dielectric layer;
a gate electrode embedded within the first dielectric layer;
a gate dielectric layer;
a channel layer comprising a semiconducting metal oxide material;
a second dielectric layer; and
a source electrode and a drain electrode embedded in the second dielectric layer and contacting a respective portion of a top surface of the channel layer,
wherein:
a combination of the gate electrode, the gate dielectric layer, the channel layer, the source electrode, and the drain electrode form a transistor;
a total length of a periphery of a bottom surface of the channel layer that overlies the gate electrode is greater than or equal to a width of the gate electrode;
the first dielectric layer comprises a top horizontal surface that contacts the gate dielectric layer and a recessed horizontal surface that does not underlie the gate dielectric layer; and
a set of sidewall segments of the first dielectric layer adjoins the top horizontal surface of the first dielectric layer to the recessed horizontal surface of the first dielectric layer.