US 11,757,043 B2
Doped polar layers and semiconductor device incorporating same
Ramesh Ramamoorthy, Moraga, CA (US); Sasikanth Manipatruni, Portland, OR (US); and Gaurav Thareja, Santa Clara, CA (US)
Assigned to Kepler Computing Inc., San Francisco, CA (US)
Filed by Kepler Computing Inc., San Francisco, CA (US)
Filed on Aug. 12, 2022, as Appl. No. 17/819,601.
Application 17/819,601 is a division of application No. 17/528,054, filed on Nov. 16, 2021, granted, now 11,417,768.
Application 17/528,054 is a continuation of application No. 17/305,301, filed on Jul. 2, 2021, granted, now 11,349,031, issued on May 31, 2022.
Application 17/305,301 is a continuation of application No. 16/842,593, filed on Apr. 7, 2020, granted, now 11,164,976, issued on Nov. 2, 2021.
Claims priority of provisional application 62/831,044, filed on Apr. 8, 2019.
Prior Publication US 2023/0142605 A1, May 11, 2023
Int. Cl. H01L 29/00 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/74 (2006.01); H01L 29/737 (2006.01); H01L 49/02 (2006.01); H10B 53/30 (2023.01); H10B 12/00 (2023.01)
CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A capacitor, comprising:
a doped crystalline polar layer formed between a pair of conductive electrodes,
wherein the doped crystalline polar layer comprises a base dielectric layer comprising a nitride of Al that is doped with a dopant or a nitride of Ga that is doped with the dopant,
wherein a reference crystalline polar layer, comprising the base dielectric layer without the dopant while otherwise being configured to be the same as the doped crystalline polar layer, exhibits a polarization that depends substantially linearly on electric field without exhibiting a hysteresis or remnant polarization, and
wherein the dopant substitutionally replaces Al or Ga of the base dielectric layer and is present at a concentration such that the doped crystalline polar layer exhibits a polarization that depends substantially nonlinearly on the electric field.