CPC H01L 29/78618 (2013.01) [H01L 28/56 (2013.01); H01L 28/57 (2013.01); H01L 28/65 (2013.01); H01L 29/2003 (2013.01); H01L 29/6684 (2013.01); H01L 29/7375 (2013.01); H01L 29/7408 (2013.01); H01L 29/7869 (2013.01); H10B 53/30 (2023.02); H10B 12/312 (2023.02); H10B 12/36 (2023.02)] | 23 Claims |
1. A capacitor, comprising:
a doped crystalline polar layer formed between a pair of conductive electrodes,
wherein the doped crystalline polar layer comprises a base dielectric layer comprising a nitride of Al that is doped with a dopant or a nitride of Ga that is doped with the dopant,
wherein a reference crystalline polar layer, comprising the base dielectric layer without the dopant while otherwise being configured to be the same as the doped crystalline polar layer, exhibits a polarization that depends substantially linearly on electric field without exhibiting a hysteresis or remnant polarization, and
wherein the dopant substitutionally replaces Al or Ga of the base dielectric layer and is present at a concentration such that the doped crystalline polar layer exhibits a polarization that depends substantially nonlinearly on the electric field.
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