CPC H01L 29/7846 (2013.01) [H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01)] | 20 Claims |
1. An integrated circuit device comprising:
a nanowire comprising a semiconductor material;
a gate structure completely surrounding a channel region of the nanowire;
a source region and a drain region adjacent to, and on opposing sides of, the nanowire, the source and drain regions comprising a semiconductor composition that is distinct from the semiconductor material of the nanowire, wherein one of the source region or the drain region has a portion laterally adjacent to the nanowire; and
a plug comprising oxide material laterally adjacent to the portion of the one of the source region or the drain region laterally adjacent to the nanowire, the plug having a perovskite crystal structure.
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