CPC H01L 29/42316 (2013.01) [H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 29/0696 (2013.01); H01L 29/0847 (2013.01); H01L 29/41758 (2013.01); H01L 29/778 (2013.01); H01L 29/7816 (2013.01)] | 20 Claims |
1. A transistor device, comprising:
a semiconductor structure;
a drain finger extending on the semiconductor structure in a first direction;
a drain interconnect extending on the semiconductor structure in the first direction, the drain interconnect having a first end and a second end;
a first conductive via coupled between the drain interconnect and the drain finger; and
a second conductive via coupled to the drain interconnect at an interior position of the drain interconnect that is offset from the first and second ends of the drain interconnect,
wherein the second conductive via connects to an upper side of the drain interconnect and the first conductive via connects to a lower side of the drain interconnect.
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