US 11,756,998 B2
Source-channel junction for III-V metal-oxide-semiconductor field effect transistors (MOSFETs)
Cheng-Ying Huang, Hillsboro, OR (US); Tahir Ghani, Portland, OR (US); Jack Kavalieros, Portland, OR (US); Anand Murthy, Portland, OR (US); Harold Kennel, Portland, OR (US); Gilbert Dewey, Beaverton, OR (US); Matthew Metz, Portland, OR (US); Willy Rachmady, Beaverton, OR (US); Sean Ma, Portland, OR (US); and Nicholas Minutillo, Beaverton, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 14, 2022, as Appl. No. 17/576,765.
Application 17/576,765 is a continuation of application No. 16/024,706, filed on Jun. 29, 2018, granted, now 11,257,904.
Prior Publication US 2022/0140076 A1, May 5, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/0684 (2013.01) [H01L 21/02543 (2013.01); H01L 21/02546 (2013.01); H01L 29/0669 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/66522 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a nanowire including a channel compound semiconductor material; and
a source area including a first portion and a second portion of the source area, wherein an interface between the nanowire and the source area includes the channel compound semiconductor material, the second portion of the source area is adjacent to the interface between the nanowire and the source area, the first portion of the source area is separated from the interface between the nanowire and the source area by the second portion of the source area, the first portion of the source area includes a first compound semiconductor material, and the second portion of the source area includes a second compound semiconductor material, and wherein the channel compound semiconductor material has a channel material bandgap and a lattice constant, the first compound semiconductor material has a first bandgap and the lattice constant, the second compound semiconductor material has a second bandgap and the lattice constant.